Analysis of TMGa/NH3/H2reaction system in GaN-MOVPE growth by computational simulation

✍ Scribed by Hirako, A. ;Koiso, S. ;Ohkawa, K.

• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 134 KB
• Volume: 203
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200565211

✦ Synopsis

Abstract

We report the major growth pathways of GaN metalorganic vapor‐phase epitaxial growth from a TMGa/NH~3~/H~2~ system studied by computational simulation. It has been found that the most major growth pathway is stepwise elimination of CH~4~ from TMGa:NH~3~ adducts (TMGa:NH~3~ → DMGaNH~2~ → MMGaNH → Ga–N → Growth), and the second major growth pathway is due to GaNH~2~ molecules sublimated from GaN layer. [Ga–N]~n~ was generated by polymerization of Ga–N molecules around the susceptor heated. GaN layer was deposited on not only the substrate but also the heated reactor walls. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)