Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate

✍ Scribed by M. Mattalah; A. Soltani; J.-C. Gerbedoen; Az. Ahaitouf; N. Defrance; Y. Cordier; J.-C. De Jaeger

• Book ID: 112182210
• Publisher: John Wiley and Sons
• Year: 2012
• Tongue: English
• Weight: 543 KB
• Volume: 9
• Category: Article
• ISSN: 1862-6351
• DOI: 10.1002/pssc.201100211