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Analysis of the growth process of a-C:H layers

✍ Scribed by Richter, F.; Schaarschmidt, G.; Franke, D.-W.; Wallendorf, T.; Rau, B.

Book ID
123559928
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
483 KB
Volume
2
Category
Article
ISSN
0925-9635

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## Abstract In the present work are presented the results of the thermodynamic analysis of the interaction processes in the system Si‐C‐H‐Cl in the temperature interval 1000‐3000 K. The equilibrium pressures of the components in the system Si‐C‐H‐Cl with taking account the formation of the condense