Analysis of the gate-source/drain capacitance behavior of a narrow-channel FD SOI NMOS device considering the 3-D fringing capacitances using 3-D simulation

✍ Scribed by Chien-Chung Chen; Kuo, J.B.; Ke-Wei Su; Sally Liu

• Book ID: 114618444
• Publisher: IEEE
• Year: 2006
• Tongue: English
• Weight: 804 KB
• Volume: 53
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2006.882277