✦ LIBER ✦

Analysis of the design space available for high-kgate dielectrics in nanoscale MOSFETs

✍ Scribed by David J Frank; Hon-Sum P Wong

Publisher: Elsevier Science
Year: 2000
Tongue: English
Weight: 593 KB
Volume: 28
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.2000.0952

No coin nor oath required. For personal study only.

✦ Synopsis

We present an analysis of the scaling behavior of MOSFETs with high-k gate insulators which elucidates the useful design space for such insulators. This analysis demonstrates that the design space is smaller than might be hoped and that within it, nanoscale bulk MOSFETs can only gain up to ∼20% additional scaling by use of high-k insulators, while symmetric double-gated FETs may gain up to ∼30%. It is shown that this analysis does not depend significantly on the gate sidewall dielectric constant or its spacing.

📜 SIMILAR VOLUMES

Space and time basis function design for

Space and time basis function design for the method of moments in time-domain analysis of wire and planar structures

✍ Elson Agastra; Claude Dedeban; Giacomo Guarnieri; Stefano Maddio; Giuseppe Pelos 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 430 KB 👁 1 views

In this article, an algorithm able to deal at the same time with wire frame and surface patch models for the method of moments in time domain is presented. After a unified theory combining both models, attention is focused on stability dependence issues on the time basis function chosen and on other

Grey relational analysis coupled with pr

Grey relational analysis coupled with principal component analysis for optimization design of the cutting parameters in high-speed end milling

✍ H.S. Lu; C.K. Chang; N.C. Hwang; C.T. Chung 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 237 KB

This paper investigates optimization design of the cutting parameters for rough cutting processes in high-speed end milling on SKD61 tool steel. The major characteristics indexes for performance selected to evaluate the processes are tool life and metal removal rate, and the corresponding cutting pa

The real space method for dynamical elec

The real space method for dynamical electron diffraction calculations in high resolution electron microscopy: II. Critical analysis of the dependency on the input parameters

✍ W. Coene; D. Van Dyck 📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 737 KB

Progress in the development of an intera

Progress in the development of an interacting computer program for magnetic field design and analysis in two and three dimensions: Collie, C. J. and Diserens, N. J. Rutherford High Energy Lab., Didcot, Berks, UK (July 1973) 23 pp

📂 Article 📅 1974 🏛 Elsevier Science 🌐 English ⚖ 116 KB

## Atomic energy Collie, C. J. and Diserens, N.J. 74.146 'Progress in the development of an interacting computer program for magnetic field design and analysis in two and three dimensions' Rutherford High Energy Lab., Didcot, Berks, UK (July 1973) 23 pp There has been a demand for an interactive