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Analysis of the atomic structure of interfaces and defects in wurtzite nitride semiconductors

✍ Scribed by P Ruterana; G Nouet

Book ID
114193463
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
297 KB
Volume
81
Category
Article
ISSN
0254-0584

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Atomic resolution scanning transmission electron microscopy (STEM) analysis, in particular the combination of Z-contrast imaging and electron energy-loss spectroscopy (EELS) has been successfully used to measure the atomic and electronic structure of materials with sub-nanometer spatial resolution.