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Analysis of structural defects in boron-implanted silicon single crystals on the basis of the results of double-and triple-crystal x-ray diffractometry

✍ Scribed by A. P. Petrakov; N. A. Tikhonov; S. V. Shilov

Book ID: 110120932
Publisher: Springer
Year: 1998
Tongue: English
Weight: 90 KB
Volume: 43
Category: Article
ISSN: 1063-7842
DOI: 10.1134/1.1259056

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