𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Analysis of Si/Six Ge1 − x/Si microstructures by spectroscopic ellipsometry

✍ Scribed by John E. Hulse; Laura M. Heller; Stephen J. Rolfe


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
485 KB
Volume
248
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Complete optical characterization of the
✍ Ohlídal, I.; Franta, D.; Pinčík, E.; Ohlídal, M. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 78 KB 👁 2 views

In this paper results concerning optical analysis of the SiO 2 =Si system performed by the combined ellipsometric and reflectometric method used in multiple-sample modification will be presented. This method is based on combining both the single-wavelength method and the dispersion method. Three mod

Comparison of shallow depth profiles of
✍ Klockenkämper, R.; von Bohlen, A.; Becker, H. W.; Palmetshofer, L. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 94 KB 👁 2 views

Thin and shallow layers of some 50-150 nm were produced by ion implantation of Co ions in Si wafers and afterwards characterized by concentration-depth profiling. Two methods were applied for that purpose: a novel method combining a stepwise wet-chemical etching of an implanted wafer with total refl