Analysis of RF scattering parameters and noise and power performances of RF-power MOS in 0.15-μm RF cmos technology for RF SOC applications

An analysis of the kink phenomenon of sc

An analysis of the kink phenomenon of scattering parameter S22 in RF power mosfets for system-on-chip (SOC) applications

✍ Yo-Sheng Lin; Shey-Shi Lu 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 183 KB

## Abstract In this paper, the kink effect in scattering parameter __S__~22~ of RF power MOSFETs with drain‐to‐spacer offset is explained quantitatively for the first time. Our results show that for RF power MOSFETs the output impedance can be represented by a “shifted” series RC circuit at low fre