Analysis of minority carrier diffusion length in SiC toward high quality epitaxial growth

✍ Scribed by T. Hatayama; H. Yano; Y. Uraoka; T. Fuyuki

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 171 KB
• Volume: 83
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2005.10.019

✦ Synopsis

Homoepitaxy of 4H-SiC grown by a horizontal hot-wall chemical vapor deposition and the minority carrier diffusion length were studied. With the addition of HCl during the etching and the epitaxy, an optimum growth window on the ð0 0 0 1Þ C face became wide. Minority carrier diffusion length in SiC epilayers was evaluated by a line-scanning electron-beam-induced current method.