Analysis of low energy boron implants in silicon through SiO2 films: implantation damage and anomalous diffusion : L. Kaabi, C. Gontrand, B. Remaki, F. Seigneur and B. Balland. Microelectronics Journal, 25, 567 (1994)

• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 127 KB
• Volume: 36
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(96)82008-7