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Analysis of hot carrier effects in a 0.35 μm high voltage n-channel LDMOS transistor

✍ Scribed by H. Enichlmair; S. Carniello; J.M. Park; R. Minixhofer

No coin nor oath required. For personal study only.

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High-voltage LDMOS transistors fully com

✍ P.M. Santos; Vitor Costa; M.C. Gomes; Beatriz Borges; Mário Lança 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 586 KB

Analysis of hot carrier effects in a 0.35&#xa0;μm high voltage n-channel LDMOS transistor