✦ LIBER ✦

Analysis of gate oxide shorts in CMOS circuits

✍ Scribed by Hong Hao; McCluskey, E.J.

Book ID: 119772148
Publisher: IEEE
Year: 1993
Tongue: English
Weight: 725 KB
Volume: 42
Category: Article
ISSN: 0018-9340
DOI: 10.1109/12.260643

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Approach to the analysis of gate oxide s

Approach to the analysis of gate oxide shorts in CMOS digital circuits

✍ Jaume A. Segura; Joan Figueras; Antonio Rubio 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 630 KB

Investigation of gate oxide breakdown in

Investigation of gate oxide breakdown in CMOS integrated circuits

✍ B. Peŝić; S. Dimitrijev; N. Stojadinović 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 487 KB

Analysis of thin gate oxide degradation

Analysis of thin gate oxide degradation during fabrication of advanced CMOS ULSI circuits

✍ Kim, S.U. 📂 Article 📅 1998 🏛 IEEE 🌐 English ⚖ 146 KB

A detailed analysis of CMOS SRAM's with

A detailed analysis of CMOS SRAM's with gate oxide short defects

✍ Segura, J.; Rubio, A. 📂 Article 📅 1997 🏛 IEEE 🌐 English ⚖ 159 KB

Analytical estimation of propagation del

Analytical estimation of propagation delay and short-circuit power dissipation in CMOS gates

✍ Nikolaidis, S.; Chatzigeorgiou, A. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 251 KB

An e$cient analytical method for calculating the propagation delay and the short-circuit power dissipation of CMOS gates is introduced in this paper. Key factors that determine the operation of a gate, such as the di!erent modes of operation of serially connected transistors, the starting point of c

Dynamic and short-circuit power of CMOS

Dynamic and short-circuit power of CMOS gates driving lossless transmission lines

✍ Ismail, Y.I.; Friedman, E.G.; Neves, J.L. 📂 Article 📅 1999 🏛 IEEE 🌐 English ⚖ 258 KB