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Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method

✍ Scribed by A. Gehring; H. Kosina; S. Selberherr

Book ID
111588905
Publisher
Springer
Year
2003
Tongue
English
Weight
95 KB
Volume
2
Category
Article
ISSN
1569-8025

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In this study, the interface trap density of metal-oxide-semiconductor (MOS) devices with Pr 2 O 3 gate dielectric deposited on Si is determined by using a conductance method. In order to determine the exact value of the interface trap density, the series resistance is estimated directly from the im