Effects of hot-carrier degradation in an
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Roland Thewes; Werner Weber
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Article
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1997
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Elsevier Science
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English
โ 671 KB
In this paper a method is presented that allows to quantify the effects of hot carrier degradation on analog CMOS circuits. Specific features of hot carrier degradation related to analog CMOS operation are discussed in detail. On this basis single transistor stress experiments are defmed monitoring