Study of charge collection efficiency in
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M. De Napoli; F. Giacoppo; G. Raciti; E. Rapisarda
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Article
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2009
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Elsevier Science
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English
β 363 KB
The Charge Collection Efficiency (CCE) in 4H-SiC epitaxial Schottky diodes is studied as a function of the applied reverse bias. Three SiC types, with different doping concentrations, were used to detect 12 C ions at 14.2, 28.1 and 37.6 MeV. In two SiC types we observe minority charge carriers, gene