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Analysis of charge-collection efficiency measurements in Schottky diodes

✍ Scribed by C. Donolato


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
742 KB
Volume
31
Category
Article
ISSN
0038-1101

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Study of charge collection efficiency in
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The Charge Collection Efficiency (CCE) in 4H-SiC epitaxial Schottky diodes is studied as a function of the applied reverse bias. Three SiC types, with different doping concentrations, were used to detect 12 C ions at 14.2, 28.1 and 37.6 MeV. In two SiC types we observe minority charge carriers, gene