Analysis and minimization of small-geometry effects on the current gain of self-aligned `etched-polysilicon' emitter bipolar transistors

✍ Scribed by Nouailhat, A.; Giroult-Matlakowski, G.; Marty, A.; Degors, N.; Bruni, M.-D.; Chantre, A.

• Book ID: 114534632
• Publisher: IEEE
• Year: 1992
• Tongue: English
• Weight: 668 KB
• Volume: 39
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.137319