Dependence of current gain β on spacer geometry and emitter size in polysilicon self-aligned bipolar transistors

✍ Scribed by M. Miura-Mattausch; J. Rüstig; R. Kircher

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 601 KB
• Volume: 33
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(90)90196-l