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Analysis and design of a multichannel HEMT gate mixer

✍ Scribed by R. Allam; C. Kolanowski; D. Théron; Y. Crosnier

Book ID
112146645
Publisher
John Wiley and Sons
Year
1995
Tongue
English
Weight
391 KB
Volume
9
Category
Article
ISSN
0895-2477

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## Abstract In this article, resistive mixers using AlGaN/GaN high electron‐mobility transistor (HEMT) devices are examined. Models of the GaN devices in linear region were created. Behavior of conversion loss with LO power is well predicted using the developed model. Three down‐conversion mixers w