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Computer-aided noise analysis of MESFET and HEMT mixers

✍ Scribed by Rizzoli, V.; Mastri, F.; Cecchetti, C.


Book ID
114551985
Publisher
IEEE
Year
1989
Tongue
English
Weight
827 KB
Volume
37
Category
Article
ISSN
0018-9480

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## Abstract In this article, resistive mixers using AlGaN/GaN high electron‐mobility transistor (HEMT) devices are examined. Models of the GaN devices in linear region were created. Behavior of conversion loss with LO power is well predicted using the developed model. Three down‐conversion mixers w