## Abstract Comparative analysis of GaN HEMT and Si LDMOS in analog predistortion power amplifiers (PAs) for WCDMA applications is represented. For validation, GaN HEMT and Si LDMOS PAs are designed and implemented with an analog predistorter, and tested for one‐tone and 4‐carrier WCDMA signals at
Analog predistortion power amplifiers using IMD sweet spots for WCDMA applications
✍ Scribed by Yong-Sub Lee; Mun-Woo Lee; Yoon-Ha Jeong
- Book ID
- 102949081
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 558 KB
- Volume
- 49
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
An analog predistortion power amplifier (PA) using intermodulation distortion (IMD) sweet spots for linearity improvement in wide‐band code division multiple access (WCDMA) applications is represented. A third‐order predistorter is used to cancel the IM3 components when the IM5 components are significantly reduced by the IMD5 sweet spots of the PA. For experimental validation, a 30‐W PEP LDMOSFET PA is implemented and tested for two‐tone and 4‐carrier WCDMA signals at 2.14 GHz. The measured results show that the notable linearity improvement is obtained over a whole output power range. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 2838–2841, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22859
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