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Experimental analysis of GaN HEMT and Si LDMOS in analog predistortion power amplifiers for WCDMA applications

✍ Scribed by Yong-Sub Lee; Mun-Woo Lee; Yoon-Ha Jeong

Publisher: John Wiley and Sons
Year: 2008
Tongue: English
Weight: 721 KB
Volume: 50
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.23134

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✦ Synopsis

Abstract

Comparative analysis of GaN HEMT and Si LDMOS in analog predistortion power amplifiers (PAs) for WCDMA applications is represented. For validation, GaN HEMT and Si LDMOS PAs are designed and implemented with an analog predistorter, and tested for one‐tone and 4‐carrier WCDMA signals at 2.14 GHz. The measured results show that the GaN HEMT PA shows better predistortability and more stable temperature and frequency characteristics compared with the Si LDMOS PA. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 393–396, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23134

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Analysis and experiment for drain bias dependence of IMD sweet spots in GaN HEMT power amplifier

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## Abstract In this article, we propose the drain bias dependency on the intermodulation distortion (IMD) sweet spots of a gallium nitride (GaN) high‐electron mobility transistors power amplifier (PA). Using the mathematical approach by the I~DS~–V~GS~ characteristic curves and two‐tone distortion