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An STM study of Fe3O4(100) grown by molecular beam epitaxy

โœ Scribed by J.M. Gaines; P.J.H. Bloemen; J.T. Kohlhepp; C.W.T. Bulle-Lieuwma; R.M. Wolf; A. Reinders; R.M. Jungblut; P.A.A. van der Heijden; J.T.W.M. van Eemeren; J.aan de Stegge; W.J.M. de Jonge


Book ID
117216903
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
902 KB
Volume
373
Category
Article
ISSN
0039-6028

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GaAs has been grown by molecular beam epitaxy on Si(lO0) using different substrate preparations, different conditions for the growth of a buffer layer and different thicknesses of the active layer. The quality of the layers is assessed by the direct interpretation of the pseudodielectric function ob