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An over 10-Gb/s transmission experiment using a p-type delta-doped InGaAs-GaAs quantum-well vertical-cavity surface-emitting laser

โœ Scribed by Hatori, N.; Mizutani, A.; Nishiyama, N.; Matsutani, A.; Sakaguchi, T.; Motomura, F.; Koyama, F.; Iga, K.

Book ID
119786562
Publisher
IEEE
Year
1998
Tongue
English
Weight
81 KB
Volume
10
Category
Article
ISSN
1041-1135

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P-type delta-doped InGaAs/GaAs quantum w
P-type delta-doped InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers
โœ Nobuaki Hatori; Akimasa Mizutani; Nobuhiko Nishiyama; Fumichika Motomura; Fumio ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 127 KB ๐Ÿ‘ 1 views

The vertical-cavity surface-emitting laser (VCSEL) operating with low threshold current is a promising way to realize future parallel optical interconnects. In this study, we propose a novel structure of p-type delta-doped In-GaAs/GaAs quantum wells for low-threshold, high-speed VCSELs. Edge-emittin