In this paper, we present a new design methodology for transimpedance amplifiers which allows us to improยจe the yield of an optical receiยจer by reducing its sensitiยจity to the photodiode and interconnection line parameters. The proposed methodology does not require statistical analyses, and can be i
An optimization procedure for MMIC large-signal amplifiers
โ Scribed by Stefano D'agostino; Claudio Paoloni
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 97 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0895-2477
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โฆ Synopsis
An optimization procedure for GaAs integrated circuits to achieยจe both small-signal and large-signal performance is proposed. Besides the geometrical dimensions of the circuit passiยจe elements, the process parameters are used as optimization ยจariables to define two separate sets of optimization ยจariables for small-signal and large-signal optimization. A large-signal MESFET model, based on simple expressions among circuit elements and process parameters, allows an effectiยจe implementation of the proposed optimization method in commercial CAD tools.
๐ SIMILAR VOLUMES
A study on the effects of the geometrical and physical parameters of the GaAs MMIC process on the yield of large-signal circuits is presented. Large-signal yield analysis as well as large-signal yield optimization are performed using a large-signal lumped-element MESFET model related to MMIC process
A large-signal model for GaN HEMT transistor suitable for designing radio frequency power amplifiers (PAs) is presented along with its parameters extraction procedure. This model is relatively easy to construct and implement in CAD software since it requires only DC and S-parameter measurements. The