โ Scribed by S. Preusser; U. Stimming; K. Wippermann
No coin nor oath required. For personal study only.
ZIrconrum dloxlde thm films and yttna stablhsed zlrconla (YSZ) tbm films prepared by vanous techniques were charactensed by optical and electrochenucal techniques Zirconnun oxide films were prepared anodlcally (2-25Onm) and by sputtenng (0 3-3 pm) YSZ films were prepared by a CVD/EVD process (-3pm), by electrophoretlc deposition (200~) and by tape casting (130~) These YSZ films are compared to smgle crystal YSZ Charactensahon techmques include photoelectrochenustry (for the ano&cally prepared films), transmittance and reflectance spectroscopy, and unpedance spectroscopy From the photoelectrochemlcal studies, the changes m the bandgap were followed for films prepared under mcreasmg electnc fields The transmittance and reflectance spectra yield mformatlon about the film thickness (for tlun films) and for thicker films, mformatlon was collected about the relative quantity of locahsed states and then positIon m the bandgap, both for the bulk matenal and the surface Impedance spectroscopy for thm iilms of ZrO, can be used to determine their dlelectnc properties For thicker YSZ films at low temperatures (less than 500 K), impedance experunents were used to gain mformatlon about the mtra-gram, inter-gram, and polansatton resistances
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