An LDMOS VHF class-E power amplifier using a high-Q novel variable inductor
✍ Scribed by Zirath, H.; Rutledge, D.B.
- Book ID
- 114553588
- Publisher
- IEEE
- Year
- 1999
- Tongue
- English
- Weight
- 173 KB
- Volume
- 47
- Category
- Article
- ISSN
- 0018-9480
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📜 SIMILAR VOLUMES
## Abstract Based on a Silicon carbide (SiC) Metal‐Semiconductor Field Effects Transistor (MESFET), a broadband VHF SiC class‐E high power amplifier is implemented by using a π‐transform output load network. Experimental results show that drain efficiency greater than 60% is achieved over a frequen
## Abstract This paper presents a design method for a compact high‐efficiency quasi‐class‐E amplifier, using a finite bias feed inductor. It is very difficult to achieve proper class‐E operation from high‐power transistors operating in the high‐frequency region because of their internal parasitic c