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An investigation of the time dependence of current degradation in MOS devices : R. Rakkhit, M. C. Peckerar and C. T. Yao. 27th a. Proc. IEEE/IRPS Int. Reliab. Phys. Symp., 103 (1989)

Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 118 KB
Volume: 30
Category: Article
ISSN: 0026-2714
DOI: 10.1016/0026-2714(90)90444-r

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📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 128 KB