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An investigation of the nature and mechanisms of ESD damage in NMOS transistors

✍ Scribed by E.A. Amerasekera; D.S. Campbell

Publisher: Elsevier Science
Year: 1989
Tongue: English
Weight: 612 KB
Volume: 32
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(89)90092-0

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