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An investigation of the electronic structure of osmium tetroxide by photoelectron spectroscopy with variable photon energy

✍ Scribed by Jennifer C. Green; Nicholas Kaltsoyannis; Kong H. Sze; Michael A. MacDonald

Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 488 KB
Volume: 175
Category: Article
ISSN: 0009-2614
DOI: 10.1016/0009-2614(90)80125-w

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✦ Synopsis

Relative partial photoionization cross sections and photoelectron branching ratios have been obtained for the valence bands of osmium tetroxlde in the ionization energy range I2 to 18 eV. The photon energies used ranged between 24 and 100 eV. The ionization cross sections of the 21, and 2a, orbitals show evidence of substantial metal character establishing strong OS-O obonding. Very little evidence is found for n-bonding.

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