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An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters

✍ Scribed by Valerio Di Lecce; Michele Esposto; Matteo Bonaiuti; Fausto Fantini; Gaudenzio Meneghesso; Enrico Zanoni; Alessandro Chini

Book ID: 107457092
Publisher: Springer US
Year: 2010
Tongue: English
Weight: 437 KB
Volume: 40
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-010-1434-7

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