Slightly modified CMOS process has been used for the formation of lateral pn junctions in SO1 structures based on oxidized porous silicon. Under forward bias these junctions emit infrared light at 1120 nm. Under reverse bias in the breakdown regime the pn junctions demonstrate both infrared and visi
An integrated vapor source with a porous silicon wick
✍ Scribed by Wallner, J. Z. ;Kunt, K. S. ;Obanionwu, H. ;Oborny, M. C. ;Bergstrom, P. L. ;Zellers, E. T.
- Book ID
- 105364218
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 616 KB
- Volume
- 204
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
A micro vapor source has been developed for calibrating micro gas chromatograph (μGC) systems. By utilizing a porous silicon wick in a micro diffusion system, vapor generation with excellent stability has been achieved. The source has shown uniform and repeatable vapor generation for n‐decane with less than a 0.1% variation in 9 hours, and less than a 0.5% variation in rate over 7 days. The evolution rate follows the diffusion model as expected, although the room temperature rate is higher than theoretically predicted. Equipped with a refillable reservoir, this vapor source is suitable for extended μGC field deployment. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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