## Abstract An integrated voltage‐controlled oscillator (VCO) operating at 1.75 GHz is designed using the InGaP/GaAs HBT process. The proposed noise‐removal circuit and FR‐4 substrate structure in this paper show an improved characteristic of phase noise and a smaller VCO dimension, respectively. T
An integrated 24-GHz differential VCO using SiGe HBT technology
✍ Scribed by Karim W. Hamed; Alois P. Freundorfer; Yahia M. M. Antar
- Book ID
- 102517952
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 231 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
This letter presents the design and performance characteristics of an integrated 24‐GHz differential voltage‐controlled oscillator (VCO). The developed VCO was implemented monolithically using the IBM BICMOS5HP process. Oscillator measured results show a tuning range of 1 GHz from 24.6 to 23.6 GHz with less than 1 dB variation in the differential output power over the entire tuning range. The fabricated VCO also exhibits a measured phase noise of −105 dBc/Hz at 1 MHz off the carrier. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2322–2325, 2008; Published online in Wiley InterScience (www.interscience.wiley.com).DOI 10.1002/mop.23666
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In this paper, a 4.2-5.4 GHz, ÀGm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35 lm SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs). According to post-layout simulation results, phase no