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An Improved Procedure for Preparing Epitaxial Tl–2201 Films on Single Crystal LaAlO3and SrTiO3

✍ Scribed by H. Q. Chen; L.-G. Johansson; Z. G. Ivanov


Book ID
110421967
Publisher
Springer US
Year
1999
Tongue
English
Weight
369 KB
Volume
117
Category
Article
ISSN
0022-2291

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Epitaxial Tl-2201 Thin Films on Single C
✍ Chen, H. Q. ;Johansson, L.-G. ;Ivanov, Z. G. ;Erts, D. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 342 KB 👁 1 views

Epitaxial Tl-2201 films have been prepared on single crystal LaAlO 3 substrates. Precursor films made by laser ablation were treated with Tl 2 O(g) at high temperature in near-equilibrium conditions. The effects of annealing temperature, heating rate and stoichiometry of the Tl 2 O(g) source on the