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An improved DC model for circuit analysis programs for submicron GaAs MESFET's

✍ Scribed by Ahmed, M.M.; Ahmed, H.; Ladbrooke, P.H.

Book ID
114536692
Publisher
IEEE
Year
1997
Tongue
English
Weight
107 KB
Volume
44
Category
Article
ISSN
0018-9383

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most advantageous without RIN and the w s 2 case with RIN at P s y60 dB. s 4. CONCLUSION ## Ε½ . In this paper, the effects of the relative intensity noise RIN of the laser output are analyzed in two-, three-, four-, and six-wavelength chip-synchronized optical orthogonal codedivision multiple-acce