𝔖 Bobbio Scriptorium

✦ LIBER ✦

An experimental comparison of measurement techniques to extract Si-SiO2 interface trap density

✍ Scribed by Steven C. Witczak; John S. Suehle; Michael Gaitan

Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 989 KB
Volume: 35
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(92)90238-8

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Influence of interface charge inhomogene

Influence of interface charge inhomogeneities on the measurement of surface state densities in Si-SiO2 interfaces by means of the MOS a.c. conductance technique : Paul A. Muls, Gilbert J. Declerck and Roger J. van Overstraeten. Solid-St. Electron. 20, 911 (1977)

📂 Article 📅 1978 🏛 Elsevier Science 🌐 English ⚖ 251 KB