An eight-phase divide-by-4 SiGe HBT ring-oscillator-based injection-locked frequency divider

✍ Scribed by Yuan-Kai Wu; Jhin-Fang Huang; Chia-Wei Chang; Sheng-Lyang Jang

• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 222 KB
• Volume: 52
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/mop.24887

✦ Synopsis

Abstract

This article presents an eight‐phase divide‐by‐4 silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) injection‐locked frequency divider (ILFD). The ILFD is based on a four‐stage ring oscillator and was fabricated in the 0.35 μm SiGe 3P3M BiCMOS technology. The divide‐by‐4 function is performed by injecting a signal to the base of the tail HBT. At the supply voltage V~dd~ of 1.3 V and at the incident power of 0 dBm, the locking range is about 2.55 GHz from the incident frequency 12.7 to 15.25 GHz. The die area is 0.54 × 0.54 mm^2^. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 201–204, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24887