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An efficient MOSFET current model for analog circuit simulation-subthreshold to strong inversion

โœ Scribed by Dunlop, L.


Book ID
119774594
Publisher
IEEE
Year
1990
Tongue
English
Weight
357 KB
Volume
25
Category
Article
ISSN
0018-9200

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An accurate 2-D model for transconductan
โœ Abhinav Kranti; Rashmi; S. Haldar; R. S. Gupta ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 289 KB

## Abstract An accurate analytical model for the transconductanceโ€toโ€current ratio (__g~m~__/__I~ds~__), currentโ€“voltage characteristics, and drain conductance is developed for a vertical surroundingโ€gate (VSG) MOSFET based on the solution of the 2โ€D Poisson's equation. The dependence of __g~m~__/_