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An efficient CAD-oriented large-signal MOSFET model

โœ Scribed by Grebennikov, A.V.; Fujiang Lin

Book ID
114553869
Publisher
IEEE
Year
2000
Tongue
English
Weight
265 KB
Volume
48
Category
Article
ISSN
0018-9480

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A new, simple heterojunction bipolar transistor (HBT) large-signal model for use in CAD is proposed and experimentally evaluated. The important development in this model is that the main model parameters are derived directly from the measurements taken during typical operating conditions. The model