An anomalous increase of threshold voltages with shortening the channel lengths for deeply boron-implanted N-channel MOSFET's

✍ Scribed by Nishida, M.; Onodera, H.

• Book ID: 114593852
• Publisher: IEEE
• Year: 1981
• Tongue: English
• Weight: 336 KB
• Volume: 28
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/t-ed.1981.20494