An analytical two dimensional subthreshold behavior model to study the nanoscale GCGS DG Si MOSFET including interfacial trap effects

✍ Scribed by Bentrcia, T.; Djeffal, F.; Chahdi, M.

• Book ID: 118199081
• Publisher: Elsevier Science
• Year: 2013
• Tongue: English
• Weight: 557 KB
• Volume: 53
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/j.microrel.2012.12.005