An analysis of factors affecting dislocation densities in pulled crystals of gallium arsenide
β Scribed by J.C. Brice
- Publisher
- Elsevier Science
- Year
- 1970
- Tongue
- English
- Weight
- 355 KB
- Volume
- 7
- Category
- Article
- ISSN
- 0022-0248
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It is shown that in undoped semi-insulating GaAs crystals grown under the stoichiometric conditions both correlated and anticorrelated dependences of the minority carrier lifetime T on the dislocation density Nd could be observed. The above-pointed effect is connected with a slight excess of Ga atom