An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with F/sub max/ of 107 GHz

✍ Scribed by Li, R.; Cai, S.J.; Wong, L.; Chen, Y.; Wang, K.L.; Smith, R.P.; Martin, S.C.; Boutros, K.S.; Redwing, J.M.

• Book ID: 126507762
• Publisher: IEEE
• Year: 1999
• Tongue: English
• Weight: 50 KB
• Volume: 20
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/55.772364