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An AlGaAs/GaAs OEIC structure for the integration of LEDs, MESFETs and photodetectors

โœ Scribed by D. Leipold; U. Kehrli; B. Delley; K. Thelen; B.D. Patterson


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
329 KB
Volume
21
Category
Article
ISSN
0921-5107

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โœฆ Synopsis


An OEIC structure of A1GaAs/GaAs grown in one single step was designed to integrate LEDs, MESFETs and photodetectors. The bandgap of the LED is shifted so that the emitted light can efficiently be detected by the photodetector. The layer structure was optimised by a one-dimensional simulation in which the Poisson-, the continuity-and the driftdiffusion equations are solved self-consistently.


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