An advanced PNP bipolar transistor design for a low-power and very-high-performance quarter-micron CBiCMOS process

Design and optimization of a low-power a

Design and optimization of a low-power and very-high-performance 0.25 μm advanced pnp bipolar process

✍ Boualem Djezzar 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 432 KB

The low-power and very-high-performance 0.25/~m vertical pnp bipolar process is designed and characterized by using the mixed two-dimensional numerical device/circuit simulator (CODECS). This pnp transistor has a 25 nmwide emitter, a 38 nm-wide base region, a current gain of 17 (without poly-Si emkt