The electromigration performance of Al(1%Si)(0.04% Cu) and Al(1%Si)(0.5% Cu) alloys has been investigated. The addition of Cu from 0.04 to 0.5% significantly increased the mean time to failure (MTF) in the electromigration tests, as expected. When the Al(1%Si)(0.5% Cu) alloy is sputtered in contaminated Ar a considerable lower MTF is found. X-ray diffractometry (XRD) analyses of the films (u -2u scans), showed a preferred k111l Al orientation for the layers deposited in pure Ar. Films deposited in contaminated Ar showed also other orientations, e.g., k200l Al; a texture leading to lower MTF values. This decrease in MTF was reported earlier by Vadya and Sinha [Thin Solid Films 75 (1981) 253]. They found a decrease in MTF proportional to the ratio of the k111l Al and k200l Al intensities in XRD. For the Al(1%Si)(0.04% Cu) a larger spread (s) in the distribution of EM tests is observed. Unfortunately this results in a lower expected lifetime. Although in XRD u -2u scans only the preferred k111l Al orientation is observed, in rocking curve measurements a double distribution of the k111l Al orientation is found. This is ascribed to the deposition of these layers in two cycles, disrupting the single k111l growth into two distributions. Obviously the disrupted preferred single k111l Al growth leads to a larger spread in the EM test results. This is an additional effect of texture on the electromigration behavior of Al alloys.