๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Amplification of drifting semiconductor plasmons and effects of carrier collisions and diffusion

โœ Scribed by Sydoruk, O

Book ID
120735039
Publisher
Institute of Physics
Year
2013
Tongue
English
Weight
371 KB
Volume
46
Category
Article
ISSN
0022-3727

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

TLM modelling of diffusion, drift and re
TLM modelling of diffusion, drift and recombination of charge carriers in semiconductors
โœ M. Y. Al-Zeben; A. H. M. Saleh; M. A. Al-Omar ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 442 KB

The paper provides an extension to the one-dimensional TLM diffusion model. The extended diffusion node presented here models the exact transport equation with diffusion drift and recombination of charge carriers in semiconductors. A general algorithm for providing a numerical solution to the transp

Effect of electron-electron and electron
Effect of electron-electron and electron-plasmon interactions on hot carrier transport in semiconductors
โœ P. Lugli; D.K. Ferry ๐Ÿ“‚ Article ๐Ÿ“… 1985 ๐Ÿ› Elsevier Science โš– 278 KB

We present an Ensemble Monte Carlo (EMC) study of the <l-,ctro~:-eleetrorL interaction in semiconductors, utilizing the full dielectric function t.; determine the contribution of the collective modes of the electron gas, i.e. the plasma oscillations, to the scattering terms. The transi~!nt dynamic