Amorphous phase formation of Mo 1-x Ge x , Mo 1-x Si x films and their superconducting properties
β Scribed by Zhong-xian, Zhao; Ru-ling, Meng; Ping, Zhou; Lin, Li
- Book ID
- 120347962
- Publisher
- Institute of Physics
- Year
- 1984
- Tongue
- English
- Weight
- 262 KB
- Volume
- 1
- Category
- Article
- ISSN
- 0256-307X
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π SIMILAR VOLUMES
We have fabricated DOrphous films of Nb,-xNix in a range of 0.15<x<0.8 by vapour quenching IlE!thod, in which they exhibited a negative temperature coefficient of resistivity and a broad X-ray peak around Nb(llO). The unexpected behaviors of Tc and Hc2 (T) for films in 0.3<x<0.6 was observed, where
## Abstract The crystal structures of two new ternary, incommensurately modulated phases in the Cr/Mo/Ge system, Cr~1-~__~x~__Mo__~x~__Ge~βΌ1.75~with__x__= 0.65 and 0.84, have been refined using the same composite approach as for the earlier reported compounds, (Mo/Rh)~11~Ge~18~and (Mo/Rh)~13~Ge~22~