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Ambipolar a-SiGe:H thin-film transistors fabricated at 200 °C

✍ Scribed by Miguel Dominguez; Pedro Rosales; Alfonso Torres; Mario Moreno; Joel Molina; Francisco De la Hidalga; Carlos Zuniga; Wilfrido Calleja


Book ID
119301075
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
386 KB
Volume
358
Category
Article
ISSN
0022-3093

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