Cluster ions of aluminum, gallium, and indium are produced by the sputtering of pure metal targets. The cluster ion abundance distributions are found to parallel those reported for sputtered Al cluster ions. Investigations of the unimolecular dissociation behavior indicate similar patterns of stabil
Aluminum cluster ions and aluminum-xenon complex ions formed by ion sputtering
β Scribed by Yahachi Saito; Itsuo Katakuse; Hiroyuki Ito
- Book ID
- 103025790
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 586 KB
- Volume
- 161
- Category
- Article
- ISSN
- 0009-2614
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β¦ Synopsis
Bare aluminum cluster ions Al.+ (n 5 90) and aluminum-xenon complex ions Xe,_ ,Al+ (k$24) produced by 7 keV Xe ion bombardment of an Al target have been analyzed using a sector-type mass spectrometer. The abundance spectra of Al: show intensity anomalies correlating with the electronic shell model for a small size region n 5 25; however, for larger clusters the spectra show only monotonic decrease with size. The aluminum-xenon complex ions are detected when the dosage of Xe ions exceeds about lOrg ions/cm*. The binding energy and formation mechanism of Xek_ ,Al+ are also discussed.
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